RESUMO
In this work, a stability study of dispersions of graphene oxide and graphene oxide functionalized with polyethylene glycol (PEG) in the presence of bovine serum albumin is carried out. First, a structural characterization of these nanomaterials is performed by scanning electron microscopy, atomic force microscopy, and ultraviolet visible spectroscopy, comparing the starting nanomaterials with the nanomaterials in contact with the biological material, i.e., bovine fetal serum. The different experiments were performed at different concentrations of nanomaterial (0.125-0.5 mg/mL) and BSA (0.01-0.04 mg/mL), at different incubation times (5-360 min), with and without PEG, and at different temperatures (25-40 °C). The SEM results show that BSA is adsorbed on the surface of the graphene oxide nanomaterial. Using UV-Vis spectrophotometry, the characteristic absorption peaks of BSA are observed at 210 and 280 nm, corroborating that the protein has been adsorbed. When the time increases, the BSA protein can be detached from the nanomaterial due to a desorption process. The stability of the dispersions is reached at a pH between 7 and 9. The dispersions behave like a Newtonian fluid with viscosity values between 1.1 and 1.5 mPa·s at a temperature range of 25 to 40 °C. The viscosity values decrease as the temperature increases.
RESUMO
AlxIn1-xN ternary semiconductors have attracted much interest for application in photovoltaic devices. Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate their Al content, the Al RF power was varied from 0 to 225 W, whereas the In RF power and deposition temperature were fixed at 30 W and 300 °C, respectively. X-ray diffraction measurements reveal a c-axis-oriented wurtzite structure with no phase separation regardless of the Al content (x = 0-0.50), which increases with the Al power supply. The surface morphology of the AlxIn1-xN layers improves with increasing Al content (the root-mean-square roughness decreases from ≈12 to 2.5 nm), and it is similar for samples grown on both Si substrates. The amorphous layer (~2.5 nm thick) found at the interface with the substrates explains the weak influence of their orientation on the properties of the AlxIn1-xN films. Simultaneously grown AlxIn1-xN-on-sapphire samples point to a residual n-type carrier concentration in the 1020-1021 cm-3 range. The optical band gap energy of these layers evolves from 1.75 to 2.56 eV with the increase in the Al. PL measurements of AlxIn1-xN show a blue shift in the peak emission when adding the Al, as expected. We also observe an increase in the FWHM of the main peak and a decrease in the integrated emission with the Al content in room-temperature PL measurements. In general, the material quality of the AlxIn1-xN films on Si is similar for both crystallographic orientations.
RESUMO
We investigate the photovoltaic performance of solar cells based on n-AlxIn1-xN (x = 0-0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlxIn1-xN layers own an optical bandgap absorption edge tuneable from 1.73 eV to 2.56 eV within the Al content range. This increase of Al content results in more resistive layers (≈10-4-1 Ω·cm) while the residual carrier concentration drops from ~1021 to ~1019 cm-3. As a result, the top n-contact resistance varies from ≈10-1 to 1 MΩ for InN to Al0.56In0.44N-based devices, respectively. Best results are obtained for devices with 28% Al that exhibit a broad external quantum efficiency covering the full solar spectrum with a maximum of 80% at 750 nm, an open-circuit voltage of 0.39 V, a short-circuit current density of 17.1 mA/cm2 and a conversion efficiency of 2.12% under air mass 1.5 global (AM1.5G) illumination (1 sun), rendering them promising for novel low-cost III-nitride on Si photovoltaic devices. For Al contents above 28%, the electrical performance of the structures lessens due to the high top-contact resistivity.
